V.Romanenko, Ya.Sergeeva, D.Ivanov, I.Saunin
Saint-Petersburg State University of Architecture and Civil Engineering, 4, 2-nd Krasnoarmeiskaya st., Saint-Petersburg, 198005, Russia *Saint-Petersburg Electrotechnical University, 5 Prof. Popova st., Saint-Petersburg, 197022, Russia
Semiconductor AIVBVI compounds are of great interest for applications in infrared techniques [1]. Study of growing and electrical properties of PbS and PbTe thin films on silicon substrates are presented in this work.
Samples were prepared by vacuum condensation of PbS and PbTe on substrates using the «hot wall» technique [2]. To provide a proper structure perfectness of layers, the intermediate buffer layers of CaF2 and BaF2 were preliminary grown on the silicon substrate. Growth conditions are shown in the Table below.