V.Romanenko, Ya.Sergeeva, D.Ivanov, I.Saunin

Saint-Petersburg State University of Architecture and Civil Engineering, 4, 2-nd Krasnoarmeiskaya st., Saint-Petersburg, 198005, Russia *Saint-Petersburg Electrotechnical University, 5 Prof. Popova st., Saint-Petersburg, 197022, Russia

Semiconductor AIVBVI compounds are of great interest for applications in infrared techniques [1]. Study of growing and electrical properties of PbS and PbTe thin films on silicon substrates are presented in this work.

Samples were prepared by vacuum condensation of PbS and PbTe on substrates using the «hot wall» technique [2]. To provide a proper structure perfectness of layers, the intermediate buffer layers of CaF2 and BaF2 were preliminary grown on the silicon substrate. Growth conditions are shown in the Table below.

X-ray diffraction examinations show the single crystalline structure of obtained films with [111] orientation. Formation of p-n junction was provided by doping from an additional dopant source during growth. PbS films were doped with Se and PbTe ones, with In. Electrical properties of thin films and p-n junctions were estimated by measuring Hall coefficient and I-V characteristics. It was shown that good-quality single-crystalline films of PbTe and PbTe with p-n junctions can be grown on silicon substrates with BaF2 and CaF2 buffer layers.